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Writer's pictureumesh biradar

Gallium Nitride (GaN) Epiwafers Market Size, Emerging Trends, Technological Advancements, and Business Strategies 2023-2029

The global Gallium Nitride (GaN) Epiwafers market was valued at US$ 432.9 million in 2022 and is projected to reach US$ 1577.3 million by 2029, at a CAGR of 20.3% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

Gallium Nitride (GaN) Epiwafers are essentially thin layers of gallium nitride that are grown or deposited on a substrate, typically a crystalline material like silicon carbide (SiC) or sapphire. These epiwafers play a crucial role as a foundation in the production of electronic devices utilizing gallium nitride technology.

Gallium nitride is a semiconductor material with a wide bandgap and is well-known for its exceptional electrical and optical properties. Through the growth of a thin layer of gallium nitride on a suitable substrate, engineers and researchers are able to manufacture high-performance electronic devices, including power amplifiers, high-frequency transistors, light-emitting diodes (LEDs), laser diodes, and various other optoelectronic components.

The use of GaN epiwafers enables the optimization of device performance, reliability, and efficiency across a wide range of applications, such as power electronics, telecommunications, solid-state lighting, and wireless communication systems.

The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2017 to 2029. This section mentions the volume of production by region from 2017 to 2029. Pricing analysis is included in the report according to each type from the year 2017 to 2029, manufacturer from 2017 to 2022, region from 2017 to 2022, and global price from 2017 to 2029.


This report aims to provide a comprehensive presentation of the global market for Gallium Nitride (GaN) Epiwafers, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Gallium Nitride (GaN) Epiwafers.

This report contains market size and forecasts of Gallium Nitride (GaN) Epiwafers in global, including the following market information:Global Gallium Nitride (GaN) Epiwafers Market Revenue, 2018-2023, 2024-2029, ($ millions)Global Gallium Nitride (GaN) Epiwafers Market Sales, 2018-2023, 2024-2029, (K Units)Global top five Gallium Nitride (GaN) Epiwafers companies in 2022 (%)

Global key players of gallium nitride (GaN) epiwafers include NTT AT, Wolfspeed, SCIOCS (Sumitomo), EpiGaN (Soitec), etc. Global top five manufacturers hold a share over 53%. China is the largest producer of gallium nitride (GaN) epiwafers holds a share over 42%. In terms of product, GaN-On-SiC is the largest segment, with a share over 38%. And in terms of application, the largest application is microwave RF, with a share over 39%.

We surveyed the Gallium Nitride (GaN) Epiwafers manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Report Attributes

Report Details

Report Title

Gallium Nitride (GaN) Epiwafers Market Size, Emerging Trends, Technological Advancements, and Business Strategies 2023-2029

Market size in 2022

US$ 432.9 million

Forecast Market size by 2029

US$ 1577.3 million

Growth Rate

CAGR of 20.3%

By Type

  • GaN-on-Sapphire

  • GaN-On-Si

  • GaN-On-SiC

  • GaN-on-GaN

  • Others

By Application

  • Photoelectric

  • Electronic Power

  • Microwave RF

  • Power Electronics

  • Radio Frequency (RF) Devices

  • Optoelectronics

By Wafer Size

  • 2-inch GaN epiwafers

  • 4-inch GaN epiwafers

  • 6-inch GaN epiwafers

  • 8-inch GaN epiwafers

  • Other sizes (e.g., 12-inch GaN epiwafers)

Key players

  • NTT AT

  • Wolfspeed

  • SCIOCS (Sumitomo)

  • EpiGaN (Soitec)

  • DOWA Electronics Materials

  • IQE

  • Enkris Semiconductor Inc

  • CorEnergy

  • GLC

  • Genettice

  • Suzhou Nanowin

  • Episil-Precision Inc

  • Xinguan Technology

  • Shanxi Yuteng

  • Sumitomo Electric Industries

  • Cree, Inc.

  • Mitsubishi Chemical Corporation

  • Aixtron SE

  • Nichia Corporation

  • Epistar Corporation

  • Osram Opto Semiconductors GmbH

  • Visual Photonics Epitaxy Co. Ltd. (VPEC)

Historical Year

2018 to 2022 (Data from 2010 can be provided as per availability)

Base Year

2022

Forecast Year

2030

Number of Pages

100+ Pages

Customization Available

Yes, the report can be customized as per your need.

 

Total Market by Segment:Global Gallium Nitride (GaN) Epiwafers Market, by Type, 2018-2023, 2024-2029 ($ Millions) & (K Units)Global Gallium Nitride (GaN) Epiwafers Market Segment Percentages, by Type, 2022 (%)

  • GaN-on-Sapphire

  • GaN-On-Si

  • GaN-On-SiC

  • GaN-on-GaN

  • Others

Global Gallium Nitride (GaN) Epiwafers Market, by Application, 2018-2023, 2024-2029 ($ Millions) & (K Units)Global Gallium Nitride (GaN) Epiwafers Market Segment Percentages, by Application, 2022 (%)

  • Photoelectric

  • Electronic Power

  • Microwave RF

  • Power Electronics

  • Radio Frequency (RF) Devices

  • Optoelectronics 

Global Gallium Nitride (GaN) Epiwafers Market, by Wafer Size, 2018-2023, 2024-2029 ($ Millions) & (K Units)Global Gallium Nitride (GaN) Epiwafers Market Segment Percentages, by Wafer Size, 2022 (%)

  • 2-inch GaN epiwafers

  • 4-inch GaN epiwafers

  • 6-inch GaN epiwafers

  • 8-inch GaN epiwafers

  • Other sizes (e.g., 12-inch GaN epiwafers)

Global Gallium Nitride (GaN) Epiwafers Market, By Region and Country, 2018-2023, 2024-2029 ($ Millions) & (K Units)Global Gallium Nitride (GaN) Epiwafers Market Segment Percentages, By Region and Country, 2022 (%)

North America

  • U.S.

  • Canada

Europe

  • U.K.

  • Germany

  • France

  • Spain

  • Rest of Europe

Asia-Pacific

  • India

  • Japan

  • China

  • Australia

  • South Korea

  • Rest of Asia-Pacific

Latin America

  • Brazil

  • Mexico

  • Rest of Latin America

The Middle East & Africa

  • South Africa

  • GCC Countries

  • Rest of the Middle East & Africa (ME&A)

Competitor AnalysisThe report also provides analysis of leading market participants including:

  • Key companies Gallium Nitride (GaN) Epiwafers revenues in global market, 2018-2023 (Estimated), ($ millions)

  • Key companies Gallium Nitride (GaN) Epiwafers revenues share in global market, 2022 (%)

  • Key companies Gallium Nitride (GaN) Epiwafers sales in global market, 2018-2023 (Estimated), (K Units)

  • Key companies Gallium Nitride (GaN) Epiwafers sales share in global market, 2022 (%)

Further, the report presents profiles of competitors in the market, key players include:

  • NTT AT

  • Wolfspeed

  • SCIOCS (Sumitomo)

  • EpiGaN (Soitec)

  • DOWA Electronics Materials

  • IQE

  • Enkris Semiconductor Inc

  • CorEnergy

  • GLC

  • Genettice

  • Suzhou Nanowin

  • Episil-Precision Inc

  • Xinguan Technology

  • Shanxi Yuteng

  • Sumitomo Electric Industries

  • Cree, Inc.

  • Mitsubishi Chemical Corporation

  • Aixtron SE

  • Nichia Corporation

  • Epistar Corporation

  • Osram Opto Semiconductors GmbH

  • Visual Photonics Epitaxy Co. Ltd. (VPEC)

Drivers:

  • The increasing demand for energy-efficient devices is fueling the adoption of GaN epiwafers. These wafers enable the development of high-performance electronic devices with enhanced energy efficiency, making them desirable across industries such as power electronics and consumer electronics.

  • The automotive and aerospace sectors are witnessing growing applications of GaN-based devices. Electric vehicles, power management systems, and radar systems are examples of areas where GaN epiwafers are being increasingly adopted, driving the demand for their use.

  • GaN epiwafers offer advantages over traditional materials, including higher power density, higher operating frequencies, and improved thermal management. These benefits make GaN epiwafers attractive for advanced electronic applications, contributing to their demand in the market.

  • The rapid growth of wireless communication systems, such as 5G and the Internet of Things (IoT), is creating a heightened demand for GaN epiwafers. These wafers are essential for high-frequency RF devices, power amplifiers, and other components used in wireless communication systems.

Restraints:

  • One of the challenges faced in the GaN epiwafers market is the high manufacturing costs associated with complex techniques and specialized equipment required for their production. This factor can limit their widespread adoption.

  • GaN technology is still evolving, and addressing technical challenges such as lattice mismatch issues, heat dissipation, and ensuring long-term reliability and stability of GaN-based devices is crucial for their market growth.

  • Despite the potential benefits of GaN epiwafers, limited market awareness among end-users and the developing infrastructure for mass production and integration of GaN-based devices present challenges in the market.

Opportunities:

  • GaN epiwafers offer opportunities for innovation and growth across various industries. Telecommunications, automotive, healthcare, and renewable energy sectors are among those benefiting from the increasing demand for high-performance and energy-efficient electronic devices that GaN epiwafers enable.

  • Advancements in manufacturing processes are continuously being pursued, leading to improvements such as cost reductions, enhanced production yields, and scalability. These advancements present opportunities for the GaN epiwafers market to further expand.

  • Collaboration and partnerships between GaN epiwafers manufacturers, technology providers, and end-users foster innovation, accelerate market adoption, and unlock new application areas for GaN-based devices.

  • Supportive government policies, funding programs, and investments in research and development can drive the growth of the GaN epiwafers market. Particularly in areas related to energy efficiency, sustainability, and advanced semiconductor technologies, government initiatives play a significant role.

Key Questions Addressed in the Paid Version of the Report

  • What is the projected market value of the Gallium Nitride (GaN) epiwafers market by 2029?-> The global GaN epiwafers market is projected to reach US$ 1577.3 million by 2029.

  • What is the compound annual growth rate (CAGR) of the GaN epiwafers market during the forecast period?-> The GaN epiwafers market is expected to grow at a CAGR of 20.3% during the forecast period.

  • Who are the key global players in the GaN epiwafers market?-> Key global players in the GaN epiwafers market include NTT AT, Wolfspeed, SCIOCS (Sumitomo), EpiGaN (Soitec), among others.

  • What is the market share of the top five global manufacturers in the GaN epiwafers market?-> The top five manufacturers hold a market share of over 53%.

  • Which country is the largest producer of GaN epiwafers?-> China is the largest producer of GaN epiwafers and holds a market share of over 42%.

  • What is the largest segment in terms of product in the GaN epiwafers market?-> GaN-On-SiC is the largest segment, holding a market share of over 38%.

  • Which application holds the largest market share in the GaN epiwafers market?-> The largest application segment in the GaN epiwafers market is microwave RF, with a market share of over 39%.

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